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• Table (5)
• Contents (5)

• name
  link
  intern
  personenkennziffer
  0
  Conrad Wolf
  https://www.hs-coburg.de/personen/prof-dr-conrad-wolf/
  true
  1
  Andreas Ladenburger
  false
  2
  Rainer Enchelmaier
  false
  3
  Klaus Thonke
  false
  4
  Rolf Sauer
  false
  

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  ⇄name => string (12) "Klaus Thonke"

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<p>In this paper we present a novel approach to fabricate single-electron devices utilizing different self-organization and self-alignment effects. Silicon quantum dots (QDs) are obtained employing reactive ion etching (RIE) into a silicon-on-insulator (SOI) substrate with a self-assembled etch mask. Electrodes with nanometer separation are fabricated and aligned to the QDs by means of a controlled electromigration process. The tunneling rates of the devices are defined by the native oxide covering the silicon QDs and can be adjusted by self-limiting thermal oxidation. The devices show clear Coulomb blockade behavior as well as Coulomb staircase features. In some samples also a gate influence is present giving rise to Coulomb diamonds in the differential conductance diagram.</p>

Wolf, Conrad R.; Ladenburger, Andreas; Enchelmaier, Rainer; Thonke, Klaus; Sauer, Rolf (2006): SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes. MRS Online Proceedings Library 958, 1021. DOI: 10.1557/PROC-0958-L10-21

https://www.hs-coburg.de/publikation/3610-soi-based-silicon-quantum-dots-contacted-by-self-aligned-nano-electrodes/