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<p>We present a technique to contact individual silicon quantum dots (QDs) by nano-­electrodes making use of a self-­alignment effect. Starting from an ultra thin silicon on insulator (SOI) substrate we employ self­-assembled gold colloidal particles as an etch mask. These particles are deposited onto the substrate using aminosilane [3­-(2­-aminoethylamino)propyltrimethoxysilane] as an adhesion agent yielding a sub­-monolayer sample coverage. The QDs are then fabricated by applying a CF<sub>4</sub> reactive ion etch (RIE) process to remove the silicon layer everywhere except below the gold colloids. Subsequently, the colloidal mask is removed by a wet chemical etch and 100-200 nm wide metal wires are patterned by electron beam lithography (EBL) onto the QD-­covered samples. A nanometer­-sized gap is created in these wires by a controlled electromigration process. The metal wires will preferentially break at the positions of the QDs, because the metal layer is dilated there resulting in a locally higher current density. This leads to a self­-alignment effect of the evolving nano­-electrodes with respect to the QDs. The native oxide of the silicon QDs is used as a tunneling barrier leading to a single­-electron device. The oxide thickness can be increased in a controlled manner by self­-limiting thermal oxidation to adjust the tunneling resistance. Finally, I(V)­-traces of these devices are collected at liquid helium temperature. They show clear Coulomb blockade behavior as well as Coulomb staircase features.<br></p>
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Wolf, Conrad R.; Ladenburger, Andreas; Enchelmaier, Rainer; Thonke, Klaus; Sauer, Rolf (2006): SOI-based silicon quantum dots contacted by self-aligned nano-electrodes. MRS Fall Meeting 2006 (Boston, USA).
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The website of Coburg University of Applied Sciences was translated using translation software provided by a third-party provider such as DeepL. The official text is the German version of the website. No liability is assumed, either explicitly or implicitly, for the accuracy, reliability, or correctness of the translations into another language.

SOI-based silicon quantum dots contacted by self-aligned nano-electrodes

We present a technique to contact individual silicon quantum dots (QDs) by nano-­electrodes making use of a self-­alignment effect. Starting from an ultra thin silicon on insulator (SOI) substrate we employ self­-assembled gold colloidal particles as an etch mask. These particles are deposited onto the substrate using aminosilane [3­-(2­-aminoethylamino)propyltrimethoxysilane] as an adhesion agent yielding a sub­-monolayer sample coverage. The QDs are then fabricated by applying a CF4 reactive ion etch (RIE) process to remove the silicon layer everywhere except below the gold colloids. Subsequently, the colloidal mask is removed by a wet chemical etch and 100-200 nm wide metal wires are patterned by electron beam lithography (EBL) onto the QD-­covered samples. A nanometer­-sized gap is created in these wires by a controlled electromigration process. The metal wires will preferentially break at the positions of the QDs, because the metal layer is dilated there resulting in a locally higher current density. This leads to a self­-alignment effect of the evolving nano­-electrodes with respect to the QDs. The native oxide of the silicon QDs is used as a tunneling barrier leading to a single­-electron device. The oxide thickness can be increased in a controlled manner by self­-limiting thermal oxidation to adjust the tunneling resistance. Finally, I(V)­-traces of these devices are collected at liquid helium temperature. They show clear Coulomb blockade behavior as well as Coulomb staircase features.

Titel:

SOI-based silicon quantum dots contacted by self-aligned nano-electrodes

Veröffentlichungsdatum:

30.11.2006

Publikationsart:

Wissenschaftliche Poster

Forschungsschwerpunkt:

Medien:

MRS Fall Meeting 2006 (Boston, USA)

DOI:

Weblink:

Heft:

Band:

Artikelnummer:

ISBN:

Autoren:

Conrad Wolf, Andreas Ladenburger, Rainer Enchelmaier, Klaus Thonke, Rolf Sauer

Medien:

MRS Fall Meeting 2006 (Boston, USA)

Herausgeber:

Seiten:

Open Access:

Peer reviewed:

Nein

Zitierung:

Wolf, Conrad R.; Ladenburger, Andreas; Enchelmaier, Rainer; Thonke, Klaus; Sauer, Rolf (2006): SOI-based silicon quantum dots contacted by self-aligned nano-electrodes. MRS Fall Meeting 2006 (Boston, USA).

Autoren:

Conrad Wolf, Andreas Ladenburger, Rainer Enchelmaier, Klaus Thonke, Rolf Sauer