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• Table (3)
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  Conrad Wolf
  https://www.hs-coburg.de/personen/prof-dr-conrad-wolf/
  true
  1
  Klaus Thonke
  false
  2
  Rolf Sauer
  false
  

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Fabrication and characterization of self-assembled and self-aligned SOI-based single-electron transistors

<p>We present a novel technique to fabricate single-electron transistors (SETs) with silicon quantum dots (QDs) as<br>conducting islands making use of a combination of self-assembly and self-alignment effects (for an overview of the<br>fabrication process, see Fig. 1). Starting from an ultra-thin silicon-on-insulator (SOI) substrate we employ aminosilane<br>molecules as an adhesion agent to self-assemble gold colloidal particles in a sub-monolayer [1]. These particles are then<br>used as an etch mask for a CF<sub>4</sub> reactive ion etch (RIE) process in which the silicon layer is removed everywhere except<br>below the gold colloids, yielding silicon QDs on a SiO<sub>2</sub> insulating layer. A metal wire together with symmetric side gate<br>electrodes is patterned by electron beam lithography (EBL) onto the QD-covered sample, and a nanometer-sized gap is<br>created in these wires by a controlled electromigration process [2]. Self-alignment of the evolving nano-electrodes with<br>respect to the QDs is achieved, because the metal layer is locally dilated by the QDs resulting in a locally higher current<br>density. Therefore the metal wires will preferentially break at the positions of the QDs. To obtain tunneling contacts the<br>native oxide layer covering the silicon QDs is used as a tunneling barrier. Its thickness can be adjusted in a controlled<br>manner by self-limiting thermal oxidation [3] to obtain an accurate tunneling resistance.<br>The devices are electrically characterized at liquid helium temperature by applying a source-drain voltage and<br>measuring the current. The I(V)-curves (Fig. 2) show clear Coulomb blockade behavior and Coulomb staircase features.<br>When the source-drain voltage is kept at a constant value and the gate voltage is varied, conductance oscillations<br>become visible. By collecting I<sub>SD</sub>(V<sub>SD</sub>)-traces for different gate voltages and calculating their numerical derivatives a so-<br>called stability diagram is obtained, exhibiting Coulomb diamonds which are typical for SETs.<br></p>

Wolf, Conrad R.; Thonke, Klaus; Sauer, Rolf (2007): Fabrication and characterization of self-assembled and self-aligned SOI-based single-electron transistors. Trends in Nanoscience 2007 (Kloster Irsee).

https://www.hs-coburg.de/publikation/3613-fabrication-and-characterization-of-self-assembled-and-self-aligned-soi-based-single-electron-transistors/